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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FM24V10-G from Infineon Technologies is a 1-Mbit non-volatile memory utilizing advanced ferroelectric RAM (F-RAM) technology. Logically organized as 128K x 8 bits, this memory offers significant advantages over traditional EEPROM, including "NoDelay™" writes that occur at bus speed without write delays. It boasts an impressive endurance of 100 trillion read/write cycles and data retention for up to 151 years.
This F-RAM device features a fast two-wire serial interface (I2C) supporting frequencies up to 3.4 MHz, making it a direct hardware replacement for serial EEPROMs. It operates within a low voltage range of 2.0 V to 3.6 V and is designed for industrial temperature ranges from -40°C to +85°C. The FM24V10-G consumes low power, with active current at 100 kHz of 175 µA and typical standby and sleep mode currents of 90 µA and 5 µA, respectively.
Packaged in an 8-pin SOIC, the FM24V10-G is suitable for surface mount applications. Its high reliability and performance characteristics make it ideal for applications requiring frequent data writes and long-term data integrity.
| Qty | Low | High |
|---|---|---|
| 1+ | $21.99 | $21.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FM24V10-G has a memory size of 1Mbit.
The FM24V10-G is a Non-Volatile Ferroelectric RAM (F-RAM) memory.
The FM24V10-G uses an I2C interface.
The FM24V10-G supports a clock frequency of up to 3.4 MHz.
The FM24V10-G operates within a voltage range of 2V to 3.6V.
The FM24V10-G is rated for an operating temperature range of -40°C to +85°C.
The FM24V10-G is available in an 8-SOIC package suitable for surface mounting.