| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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580 pcs
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580 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon FM22L16-55-TGTR is a 4-Mbit nonvolatile memory, logically organized as 256K x 16, utilizing F-RAM technology. This memory offers high endurance with 100 trillion read/write cycles and an impressive 151-year data retention, making it a superior alternative to battery-backed SRAM.
Designed for SRAM compatibility with an industry-standard pinout, it boasts a 55 ns access time and 110 ns cycle time. The device supports NoDelay™ writes and page mode operation for efficient data transfer. Its low power consumption is highlighted by an active current of 8 mA (typ), standby current of 90 µA (typ), and sleep mode current of 5 µA (max).
Operating within a voltage range of 2.7 V to 3.6 V and an industrial temperature range of -40 °C to +85 °C, the FM22L16-55-TGTR is suitable for demanding applications. It is housed in a 44-pin TSOP Type II package, designed for surface mounting.
This F-RAM is ideal for applications requiring frequent or rapid writes, offering monolithic reliability and superior resistance to moisture, shock, and vibration compared to traditional battery-backed solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $52.05 | $52.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7 V to 3.6 V.
TSOP Type II.
–40 °C to +85 °C.
4 Mbit organized as 256K x 16.
100 trillion cycles.
151 years.
90 µA typical.