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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FM22L16-55-TGTR is a 4-Mbit ferroelectric random access memory (F-RAM) from Infineon Technologies, logically organized as 256K x 16. This non-volatile memory offers high endurance with 100 trillion read/writes and a data retention of 151 years. It is SRAM compatible with an industry-standard pinout and provides a fast 55-ns access time and 110-ns cycle time.
Designed for low power consumption, it features active current of 8 mA (typ), standby current of 90 µA (typ), and sleep mode current of 5 µA (max). The device operates within a low voltage range of 2.7 V to 3.6 V and is rated for industrial temperatures from -40°C to +85°C. The FM22L16-55-TGTR is supplied in a 44-pin thin small outline package (TSOP) Type II, suitable for surface mounting.
This F-RAM technology offers superior reliability compared to battery-backed SRAM modules, eliminating battery concerns and providing monolithic reliability. Its fast write timing and high endurance make it ideal for applications requiring frequent or rapid writes. The memory is RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $52.05 | $52.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FM22L16-55-TGTR has a memory size of 4Mbit.
The access time for the FM22L16-55-TGTR is 110 ns.
The operating voltage range for the FM22L16-55-TGTR is 2.7 V to 3.6 V.
The operating temperature range for the FM22L16-55-TGTR is -40°C to +85°C.
The FM22L16-55-TGTR is supplied in a 44-TSOP II package.
The FM22L16-55-TGTR offers a data retention period of 151 years.
The endurance rating for the FM22L16-55-TGTR is 100 trillion read/writes.