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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies FM22L16-55-TG is a 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K x 16. This non-volatile memory offers high endurance with 100 trillion read/writes and a data retention of 151 years. It features SRAM compatibility with a 55-ns access time and 110-ns cycle time, along with NoDelay™ writes and page mode operation.
Designed for low power consumption, it draws 8 mA active current and 90 µA standby current. The device operates within a voltage range of 2.7 V to 3.6 V and an industrial temperature range of -40 °C to +85 °C. It is supplied in a 44-pin thin small outline package (TSOP) Type II, suitable for surface mounting.
This F-RAM is superior to battery-backed SRAM modules, offering monolithic reliability and resistance to moisture, shock, and vibration without battery concerns. Its fast write timing and high write endurance make it ideal for applications requiring frequent or rapid writes.
| Qty | Low | High |
|---|---|---|
| 1+ | $52.28 | $52.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FM22L16-55-TG has a memory size of 4Mbit.
The FM22L16-55-TG is a Non-Volatile F-RAM (Ferroelectric RAM) memory.
The access time for the FM22L16-55-TG is 110 ns.
The operating voltage range for the FM22L16-55-TG is 2.7V to 3.6V.
The operating temperature range is -40°C to +85°C.
The FM22L16-55-TG is supplied in a 44-TSOP II package.
The FM22L16-55-TG offers a data retention of 151 years.