| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,759 pcs
|
8759 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The FLM6472-4F from Fujitsu Semiconductor is a high-performance RF Power Field-Effect Transistor. This component is built using Gallium Arsenide technology, specifically as an N-Channel Junction FET, making it suitable for demanding RF applications.
Key specifications include a 1-element design and a hermetically sealed metal ceramic package, identified as CASE IB. It has 2 terminals and 2 pins, indicating a dual terminal configuration. The transistor operates within the C Band frequency range.
Environmental compliance includes RoHS3 status, and it is classified as Lead Free. The Moisture Sensitivity Level (MSL) is rated at 1, signifying unlimited shelf life under standard conditions. This part is designed for robust performance in various electronic systems requiring efficient power amplification in the C Band.
Its construction and specifications make it a reliable choice for applications where stable and high-power RF amplification is critical. The hermetic sealing ensures durability and performance integrity in challenging operating environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FLM6472-4F is an RF Power Field-Effect Transistor, specifically a Gallium Arsenide N-Channel Junction FET.
The FLM6472-4F is designed for C Band applications.
The FLM6472-4F is housed in a HERMETIC SEALED, METAL CERAMIC package, identified as CASE IB.
The FLM6472-4F has 2 terminals.
The FLM6472-4F is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the FLM6472-4F is 1 Unlimited.
