Mfr Part #:

FLM6472-4F

The Fujitsu Semiconductor FLM6472-4F is an RF Power Field-Effect Transistor designed for C Band applications. It features a Gallium Arsenide N-Channel Junction FET construction.

✓ Total Stock: 8,759 pcs

$ Price Range: $1.84

FLM6472-4F Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	8,759 pcs On Request	8759 pcs	On Request	1	On Request	On Request	15+	On Request	On Request

FLM6472-4F Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Fujitsu Semiconductor

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FLM6472-4F Description

Short technical summary and product information.

The FLM6472-4F from Fujitsu Semiconductor is a high-performance RF Power Field-Effect Transistor. This component is built using Gallium Arsenide technology, specifically as an N-Channel Junction FET, making it suitable for demanding RF applications.

Key specifications include a 1-element design and a hermetically sealed metal ceramic package, identified as CASE IB. It has 2 terminals and 2 pins, indicating a dual terminal configuration. The transistor operates within the C Band frequency range.

Environmental compliance includes RoHS3 status, and it is classified as Lead Free. The Moisture Sensitivity Level (MSL) is rated at 1, signifying unlimited shelf life under standard conditions. This part is designed for robust performance in various electronic systems requiring efficient power amplification in the C Band.

Its construction and specifications make it a reliable choice for applications where stable and high-power RF amplification is critical. The hermetic sealing ensures durability and performance integrity in challenging operating environments.

FLM6472-4F Quick Information

Product Type: RF Power Field-Effect Transistor

Canonical Name: FLM6472-4F RF Power Field-Effect Transistor

Subcategory: JFET

FLM6472-4F Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

FLM6472-4F Estimated Pricing

Qty	Low	High
1+	$1.84	$1.84

Estimated market price range - modelled values for guidance only, not live distributor offers.

FLM6472-4F Features

Gallium Arsenide N-Channel Junction FET.
Designed for C Band RF power applications.
Hermetically sealed metal ceramic package.
Features 2 terminals and 1 element.
RoHS3 compliant and MSL 1 rated.

FLM6472-4F Applications

Suitable for C Band RF amplification.
Ideal for high-frequency power circuits.
Used in demanding electronic systems.
Robust performance in various environments.

FLM6472-4F FAQs

6 frequently asked questions generated from this part’s specifications.

What type of transistor is the FLM6472-4F?

The FLM6472-4F is an RF Power Field-Effect Transistor, specifically a Gallium Arsenide N-Channel Junction FET.

What frequency band is the FLM6472-4F designed for?

The FLM6472-4F is designed for C Band applications.

What is the package type for the FLM6472-4F?

The FLM6472-4F is housed in a HERMETIC SEALED, METAL CERAMIC package, identified as CASE IB.

How many terminals does the FLM6472-4F have?

The FLM6472-4F has 2 terminals.

What is the RoHS status of the FLM6472-4F?

The FLM6472-4F is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the FLM6472-4F?

The Moisture Sensitivity Level (MSL) for the FLM6472-4F is 1 Unlimited.