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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The FLM4450-8F from Eudyna is a power GaAs FET specifically designed for C-Band communication frequencies, operating from 4.4 to 5.0 GHz. It is internally matched for optimal performance in a 50 ohm system, providing a typical output power of 39.5 dBm at 1dB gain compression and a typical power gain of 10 dB. The device also boasts a high typical power-added efficiency (PAE) of 36% and low third-order intermodulation distortion (IM3) of -46 dBc at a specified output power.
Absolute maximum ratings include a drain-source voltage of 15V and a storage temperature range of -65 to +175°C. The recommended operating drain-source voltage should not exceed 10 volts. The FET is housed in an IB case style and is suitable for applications requiring high power and gain in the C-Band.
Key electrical characteristics include a typical transconductance of 2000 mS and a pinch-off voltage ranging from -1.0 to -3.5 V. The channel-to-case thermal resistance is rated between 3.0 and 3.5 °C/W, with a maximum channel temperature rise of 80°C under specific operating conditions. This combination of features makes the FLM4450-8F a reliable component for demanding RF applications.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical output power at 1dB gain compression for the FLM4450-8F is 39.5 dBm.
The typical power gain at 1dB gain compression is 10.0 dB.
The FLM4450-8F operates across a broad band from 4.4 to 5.0 GHz.
The typical power-added efficiency is 36%.
The third-order intermodulation distortion is -46 dBc at an output power of 28.5 dBm.
Fujitsu recommends that the drain-source operating voltage should not exceed 10 volts.
The RoHS status is RoHS3 Compliant.