| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Manufacturer Name | |
| Diode Capacitance | |
| Forward Voltage | |
| Power Dissipation | |
| Reverse Recovery Time |
The FLLD261 from Diodes Incorporated is a silicon planar low leakage diode pair housed in a SOT-23 package. This component is designed for applications requiring low leakage characteristics.
Key electrical specifications include a repetitive peak reverse voltage of 100V and an average rectified forward current of 250mA. The non-repetitive peak forward current can reach up to 3.0A for transient conditions (t=1 μs). Power dissipation is rated at 330mW at an ambient temperature of 25°C.
The operating and storage temperature range for the FLLD261 is -55°C to +150°C. Electrical characteristics at 25°C include a maximum reverse current of 5nA at VRRM=100V, and 5μA at 150°C. The reverse recovery time is 400ns, and the forward recovery time is 10ns. Diode capacitance is specified at 4pF at VR=1V and f=1MHz. The typical forward overshoot voltage is 0.9V at IF=10mA with a 5ns rise time, and the forward voltage is a maximum of 1.4V at IF=-200mA.
This diode pair is suitable for various electronic circuits where precise control of current and voltage is necessary, particularly in applications sensitive to leakage currents.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage is 100V.
The maximum average rectified forward current is 250mA.
The operating and storage temperature range is -55°C to +150°C.
The FLLD261 is available in a SOT-23 surface-mount package.
The maximum reverse recovery time is 400ns.
The maximum reverse current is 5nA at 25°C and 5µA at 150°C.