| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,742 pcs
|
2742 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature | |
| Power Dissipation | |
| SVHC Present |
The FLL120MK is a Power GaAs FET manufactured by Fujitsu Semiconductor, specifically engineered for high-power applications at L-Band frequencies. It provides enhanced gain, linearity, and efficiency, outperforming traditional silicon devices.
Key electrical specifications include a minimum breakdown voltage of 15V and a power dissipation of 37.5W. The device can operate at a maximum temperature of 175°C, making it suitable for demanding environments.
With its performance characteristics in multitone environments for Class AB operation, the FLL120MK is ideally suited for base station applications. Its design focuses on delivering superior performance where high power and efficiency are critical.
The FET features 2 terminals and is designed for robust performance in communication systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
175°C.
15V.
37.5W.
2.
It is an L-Band medium and high power GaAs FET.