| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Storage Temperature |
The Fujitsu Semiconductor FLK207MH-14 is a power GaAs FET engineered for Ku-Band frequency applications. This component is designed to provide superior power, gain, and efficiency, making it suitable for general-purpose use.
Key electrical characteristics include a typical output power at 1dB Gain Compression Point (P1dB) of 32.5 dBm and a typical power gain (G1dB) of 6.0 dB at 14.5 GHz. The device also boasts a typical power-added efficiency (ηadd) of 27% under similar conditions. Absolute maximum ratings specify a drain-source voltage of 15V and a gate-source voltage of -5V, with a total power dissipation of 12.5W at 25°C.
Thermal considerations include a storage temperature range of -65 to +175°C and a channel temperature of 175°C maximum. The channel-to-case thermal resistance is rated at 10°C/W. The component is housed in a hermetic metal/ceramic package, designated as case style MH.
Recommended operating conditions suggest that the drain-source operating voltage should not exceed 10 volts, and the operating channel temperature should not exceed 145°C for reliable operation. The FLK207MH-14 is built under Fujitsu's stringent Quality Assurance Program, ensuring high reliability and consistent performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.00 | $2.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
15 V.
Hermetic Metal/Ceramic Package (MH case style).
175 °C, with a recommended maximum of 145 °C.
800 mA at VDS = 5V, IDS = 40mA.
32.5 dBm at VDS = 10V, IDS = 0.6 IDSS, f = 14.5 GHz.
27%.
-1.0 to -3.5 V.