| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FLK017WF from Honest Han is a Power GaAs FET specifically designed for general purpose applications within the X and Ku-Band frequency ranges. This component provides superior power, gain, and efficiency, making it suitable for demanding RF applications.
Key electrical characteristics include a typical output power of 20.5 dBm at 1dB gain compression and a typical power gain of 7.5 dB at 1dB gain compression, measured at 14.5 GHz and 12 GHz respectively. The device also boasts a typical power-added efficiency of 26% and a typical noise figure of 2.5 dB.
The FLK017WF is housed in a hermetic metal/ceramic package, ensuring reliability and consistent performance. Absolute maximum ratings include a drain-source voltage of 15V and a storage temperature range of -65 to +175°C. For reliable operation, Eudyna recommends keeping the drain-source operating voltage below 10 volts and the channel temperature below 145°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical output power at 1dB gain compression for the FLK017WF is 20.5 dBm.
The typical power gain at 1dB gain compression for the FLK017WF is 7.5 dB.
The typical power-added efficiency for the FLK017WF is 26%.
The FLK017WF is supplied in a hermetic metal/ceramic package with case style WF.
The absolute maximum ratings for the FLK017WF include a drain-source voltage of 15V, a gate-source voltage of -5V, and a total power dissipation of 1.15W at 25°C.
Eudyna recommends that the drain-source operating voltage (VDS) for the FLK017WF should not exceed 10 volts for reliable operation.