| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,977 pcs
|
8977 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FKV550N is a 50V, 50A N-Channel Power MOSFET manufactured by Sanken Electric. It utilizes trench technology to achieve a typical on-resistance of 12mΩ at 10V gate drive, with a maximum of 15mΩ. The gate threshold voltage ranges from 3.0V to 4.2V at 250µA drain current. Switching characteristics include a 30ns turn-on delay, 360ns rise time, 130ns turn-off delay, and 120ns fall time. Input capacitance is 2000pF, output capacitance 1200pF, and reverse transfer capacitance 500pF. The device is rated for single pulse avalanche energy of 150mJ at 50A.
The MOSFET is packaged in a TO-220-3 Full Pack (TO-220F) through-hole package, which provides electrical isolation. Thermal resistance from junction to case is 3.57°C/W, and junction to ambient is 62.5°C/W. The operating junction temperature range is -55°C to 150°C, with storage temperature from -55°C to 150°C. Maximum power dissipation is 35W at case temperature 25°C.
Typical applications include DC-DC converters and synchronous rectification circuits. The FKV550N is RoHS compliant as verified by the datasheet, which states device composition complies with the RoHS directive.
| Qty | Low | High |
|---|---|---|
| 3,750+ | $1.83 | $1.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 V.
TO-220-3 Full Pack (TO-220F).
150 °C.
Yes, the datasheet states it is RoHS compliant.
50 A at Ta = 25 °C.
12 mΩ at Vgs = 10 V, Id = 25 A.
Between 3.0 V and 4.2 V at Vds = 10 V, Id = 250 µA.