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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
76,235 pcs
|
76235 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJX945GTF is an NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. It features a maximum collector-emitter voltage (Vceo) of 50V and a maximum collector current (Ic) of 150mA. The device offers a DC current gain (hFE) of at least 200 at 1mA collector current and 6V collector-emitter voltage, with a maximum collector-emitter saturation voltage of 300mV at 10mA base current and 100mA collector current. The transition frequency (ft) is 300MHz, making it suitable for low-power amplification and switching applications up to VHF frequencies. The transistor is housed in a surface-mount SC-70 / SOT-323 package, with the supplier device package being SOT-323. It has a maximum power dissipation of 200mW and a maximum operating junction temperature of 150°C. The device is listed as RoHS3 compliant, though this is unverified. Typical applications include general-purpose switching, signal amplification, and driver stages in portable electronics.
| Qty | Low | High |
|---|---|---|
| 18,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 50V.
The package is SC-70, SOT-323, with the supplier device package being SOT-323.
The maximum operating junction temperature is 150°C.
The part is listed as RoHS3 compliant, but this is unverified (low confidence).
The minimum DC current gain (hFE) is 200 at Ic=1mA, Vce=6V.
The maximum collector-emitter saturation voltage (Vce(sat)) is 300mV at Ib=10mA, Ic=100mA.
The transition frequency (ft) is 300 MHz.