| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60,265 pcs
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60265 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FJX4006RTF is a PNP pre-biased bipolar junction transistor from On Semiconductor. It integrates a 47 kΩ base resistor (R1), reducing external component count and simplifying circuit design. The transistor is offered in a compact SOT-323 (SC-70) surface mount package.
Key specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a maximum collector current (Ic) of 100 mA, and a maximum power dissipation of 200 mW. The minimum DC current gain (hFE) is 68 at Ic=5 mA and Vce=5 V, with a typical transition frequency of 200 MHz and a maximum saturation voltage (VCE(sat)) of 300 mV at Ib=500 µA and Ic=10 mA.
The integrated bias resistor allows the FJX4006RTF to operate with fewer external parts, making it useful for low-power switching, logic interface, and general-purpose digital circuits. The surface mount SOT-323 package supports automated manufacturing and is ideal for high-density PCB designs. The part is designated as RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 27,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50 V.
It is available in SC-70 and SOT-323 surface mount packages, with SOT-323 as the supplier device package.
It is listed as RoHS3 Compliant in the database.
The maximum collector current (Ic) is 100 mA.
Yes, it includes a built-in 47 kΩ base resistor (R1).
The maximum power dissipation is 200 mW.
The minimum DC current gain (hFE) is 68 at Ic=5 mA and Vce=5 V.