| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJV992PMTF is a PNP bipolar junction transistor manufactured by ON Semiconductor. It is suited for low-power switching and amplification in compact surface mount designs. The device is offered in TO-236-3, SC-59, and SOT-23-3 packages with a supplier device package of SOT-23-3.
Electrical specifications include a maximum collector-emitter breakdown voltage of 120 V, a maximum collector current of 50 mA, and a maximum power dissipation of 300 mW. The minimum DC current gain (hFE) is 200 at Ic=1mA, Vce=6V, and the transition frequency is 50 MHz.
The maximum collector-emitter saturation voltage is 300 mV at Ib=1mA, Ic=10mA. Operating junction temperature is rated up to 150°C. These characteristics make it appropriate for general-purpose low-power switching and signal conditioning circuits.
| Qty | Low | High |
|---|---|---|
| 6,045+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
120 V.
TO-236-3, SC-59, SOT-23-3; supplier device package is SOT-23-3.
Maximum 150°C (junction temperature).
Reported as RoHS3 Compliant, but compliance status is unverified from source data.
200 minimum at Ic=1mA, Vce=6V.
300 mV maximum at Ib=1mA, Ic=10mA.
50 MHz.