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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
257,816 pcs
|
257816 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Collector Cut-Off Current | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Mounting Type | |
| Output Capacitance | |
| Power | |
| Standard Package Quantity | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum @ IC = -1.0 mA, VCE = -10 V) | |
| hfe (Minimum @ IC=10 mA, VCE=10 V) |
The FJV42MTF is an NPN high-voltage transistor designed for general-purpose switching and amplifier applications. Manufactured by onsemi, this device offers a maximum collector-emitter voltage of 350V and a continuous collector current of 500mA, making it suitable for circuits requiring high voltage handling in a compact form factor.
Key electrical characteristics include a DC current gain (hFE) of 25 minimum at 1mA and 40 minimum at 10mA and 30mA, ensuring consistent performance across a range of operating conditions. The collector-emitter saturation voltage is typically 500mV at 20mA collector current, contributing to low power dissipation. The transistor also features a current gain-bandwidth product of 50MHz, enabling use in moderate-frequency applications.
The device is housed in a surface-mount SOT-23-3 package (also known as TO-236 or SC-59), which is ideal for space-constrained PCB designs. It is supplied in tape and reel packaging with 3000 units per reel, suitable for automated assembly. The maximum power dissipation is 350mW at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 357°C/W.
This transistor is commonly used in high-voltage switching circuits, relay drivers, and linear amplifier stages. Its compact package and high voltage rating make it a versatile choice for industrial and consumer electronics where board space is limited.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.29 | $0.29 |
| 10+ | $0.18 | $0.18 |
| 100+ | $0.11 | $0.11 |
| 500+ | $0.08 | $0.08 |
| 1,000+ | $0.07 | $0.07 |
| 3,000+ | $0.06 | $0.06 |
| 6,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 350V.
The FJV42MTF is available in a surface-mount SOT-23-3 package (also known as TO-236 or SC-59).
The storage temperature range is -55°C to +150°C.
The FJV42MTF is marked as RoHS3 compliant, but this is unverified. The datasheet indicates a Pb-free package.
The DC current gain (hFE) is minimum 25 at 1mA, and minimum 40 at 10mA and 30mA, with VCE=10V.
The maximum collector-emitter saturation voltage is 500mV at IC=20mA and IB=2mA.
The typical current gain-bandwidth product (fT) is 50MHz at IC=10mA, VCE=20V.