FJV4103RMTF The FJV4103RMTF is a PNP pre-biased transistor from On Semiconductor. It features a 50V collector-emitter voltage, 100mA collector current, and 200mW power dissipation in a SOT-23-3 package.
Mfr Part #:

FJV4103RMTF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FJV4103RMTF is a PNP pre-biased transistor from On Semiconductor. It features a 50V collector-emitter voltage, 100mA collector current, and 200mW power dissipation in a SOT-23-3 package.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.02 - $0.03

FJV4103RMTF Available from 1 distributor

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✓ Non-Authorised
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3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

FJV4103RMTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJV4103RMTF Description

Short technical summary and product information.

The FJV4103RMTF is a PNP pre-biased bipolar junction transistor manufactured by ON Semiconductor. It integrates a 22 kΩ base resistor, simplifying circuit design by reducing external component count. The transistor is rated for a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA, making it suitable for low-power switching and amplification applications.

 

With a typical transition frequency of 200 MHz and a minimum DC current gain (hFE) of 56 at 5mA, 5V, this device offers good high-frequency performance for signal processing. The maximum Vce saturation voltage is 300mV at 500µA base current and 10mA collector current, ensuring low on-state losses.

 

The FJV4103RMTF is housed in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59), which is ideal for compact PCB layouts. It has a maximum power dissipation of 200mW and is rated for an MSL of 1 (unlimited floor life). The component is marked as RoHS3 compliant and REACH unaffected, though these compliance claims are unverified.

FJV4103RMTF Quick Information

Product Type: Pre-Biased PNP Transistor
Canonical Name: FJV4103RMTF PNP Pre-Biased Transistor
Subcategory: Pre-Biased PNP

FJV4103RMTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJV4103RMTF Estimated Pricing

Qty Low High
3,000+ $0.03 $0.03
6,000+ $0.03 $0.03
9,000+ $0.03 $0.03
15,000+ $0.02 $0.02
21,000+ $0.02 $0.02
30,000+ $0.02 $0.02
75,000+ $0.02 $0.02
150,000+ $0.02 $0.02
300,000+ $0.02 $0.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJV4103RMTF Features

  • PNP pre-biased transistor with built-in base resistor.
  • Rated for 50V collector-emitter voltage.
  • 100mA maximum collector current.
  • 200mW power dissipation in SOT-23-3 package.
  • 200 MHz typical transition frequency.

FJV4103RMTF Applications

  • Suitable for switching and amplification circuits.
  • Ideal for low-power signal processing.
  • Used in portable electronics due to small footprint.
  • Applicable in automotive and industrial control modules.

FJV4103RMTF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

50 V.

What is the package type?

SOT-23-3 (also TO-236-3, SC-59).

Is this component RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the base resistor value?

22 kΩ.

What is the DC current gain (hFE)?

Minimum 56 at Ic=5mA, Vce=5V.

What is the transition frequency?

200 MHz typical.

What is the maximum power dissipation?

200 mW.

FJV4103RMTF Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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