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FJV4102RMTF PNP pre-biased transistor from On Semiconductor with 50V collector-emitter breakdown voltage, 100mA collector current, and 200mW power dissipation in a SOT-23-3 surface mount package.
Mfr Part #:

FJV4102RMTF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP pre-biased transistor from On Semiconductor with 50V collector-emitter breakdown voltage, 100mA collector current, and 200mW power dissipation in a SOT-23-3 surface mount package.
✓ Total Stock: 21,000 pcs
$ Price Range: $0.05

FJV4102RMTF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
21,000 pcs
On Request
21000 pcs On Request 1 On Request On Request On Request On Request On Request
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FJV4102RMTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Power
Resistor
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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FJV4102RMTF Description

Short technical summary and product information.

The FJV4102RMTF is a PNP pre-biased bipolar junction transistor manufactured by On Semiconductor. It features a built-in 10 kΩ base resistor (R1), simplifying circuit design by reducing external component count. The transistor has a maximum collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It offers a DC current gain (hFE) of minimum 30 at Ic=5mA, Vce=5V, and a typical transition frequency of 200 MHz. The maximum Vce saturation voltage is 300 mV at Ib=500µA, Ic=10mA. Maximum power dissipation is 200 mW. The device is housed in a surface mount SOT-23-3 package (also available as TO-236-3 or SC-59). This pre-biased transistor is suitable for switching and amplifier applications where space and component count are critical.

FJV4102RMTF Quick Information

Product Type: Pre-Biased Bipolar Junction Transistor
Series: FJV4102R
Canonical Name: FJV4102RMTF PNP Pre-Biased Transistor
Subcategory: Pre-Biased

FJV4102RMTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJV4102RMTF Estimated Pricing

Qty Low High
6,045+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJV4102RMTF Features

  • PNP pre-biased with 10 kΩ base resistor.
  • 50V collector-emitter breakdown voltage.
  • 100 mA maximum collector current.
  • 200 mW maximum power dissipation.
  • Surface mount SOT-23-3 package.

FJV4102RMTF Applications

  • Low-power switching circuits.
  • Driver stages in portable devices.
  • Signal amplification in audio circuits.
  • General purpose logic level shifting.

FJV4102RMTF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the FJV4102RMTF?

The maximum collector-emitter breakdown voltage is 50 V.

What is the maximum collector current?

The maximum collector current is 100 mA.

What package does the FJV4102RMTF come in?

It is available in a surface mount SOT-23-3 package, also listed as TO-236-3 or SC-59.

Is the FJV4102RMTF RoHS compliant?

The part is listed as RoHS3 Compliant, though this is unverified.

What is the base resistor value?

The built-in base resistor (R1) is 10 kΩ.

What is the transition frequency of this transistor?

The typical transition frequency is 200 MHz.

What is the maximum power dissipation?

The maximum power dissipation is 200 mW.

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