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FJV3115RMTF FJV3115RMTF is an NPN Pre-Biased transistor from On Semiconductor. It features a 50V collector-emitter breakdown voltage, 100mA collector current, and 200mW power dissipation in a SOT-23-3 surface mount package.
Mfr Part #:

FJV3115RMTF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FJV3115RMTF is an NPN Pre-Biased transistor from On Semiconductor. It features a 50V collector-emitter breakdown voltage, 100mA collector current, and 200mW power dissipation in a SOT-23-3 surface mount package.
✓ Total Stock: 21,050 pcs

FJV3115RMTF Available from 1 distributor

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✓ Non-Authorised
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Smaxon Electronics ✓
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21,050 pcs
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21050 pcs On Request 1 On Request On Request 1719+ On Request On Request
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FJV3115RMTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Medical Grade
Mounting Type
Power
Resistor
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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FJV3115RMTF Description

Short technical summary and product information.

The FJV3115RMTF is an NPN pre-biased bipolar junction transistor manufactured by On Semiconductor. It is designed for switching and amplification applications where a built-in bias resistor simplifies circuit design. The transistor has a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Power dissipation is rated at 200mW. The DC current gain (hFE) is a minimum of 33 at 10mA collector current and 5V Vce. The saturation voltage is 300mV maximum at 500µA base current and 10mA collector current. The transition frequency is typically 250MHz. The base resistor (R1) is 10kΩ, making it a pre-biased device suitable for logic-level drive applications. The device is packaged in a TO-236-3 / SOT-23-3 surface mount package, which is ideal for compact PCB designs. It is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited). The part is available in tape and reel packaging for automated assembly.

FJV3115RMTF Quick Information

Product Type: NPN Pre-Biased Transistor
Canonical Name: FJV3115RMTF NPN Pre-Biased Transistor
Subcategory: Single Pre-Biased Bipolar Junction Transistor

FJV3115RMTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJV3115RMTF Features

  • NPN pre-biased transistor with integrated resistor.
  • 50V collector-emitter breakdown voltage rating.
  • 100mA maximum collector current capability.
  • 200mW power dissipation in SOT-23-3 package.
  • 250MHz typical transition frequency.

FJV3115RMTF Applications

  • Suitable for logic-level switching applications.
  • Used in relay and LED driver circuits.
  • Ideal for low-power amplification stages.
  • Reduces component count in digital outputs.

FJV3115RMTF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the FJV3115RMTF?

50V.

What package is the FJV3115RMTF available in?

SOT-23-3 (TO-236-3, SC-59).

Is the FJV3115RMTF RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the maximum collector current of the FJV3115RMTF?

100mA.

What is the power dissipation rating of the FJV3115RMTF?

200mW.

What is the DC current gain (hFE) of the FJV3115RMTF?

Minimum 33 at 10mA, 5V.

What is the base resistor value in the FJV3115RMTF?

10kΩ.

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