FJV3114RMTF The FJV3114RMTF is an NPN pre-biased transistor from On Semiconductor. It features a 100 mA maximum collector current, 50 V collector-emitter breakdown voltage, and 250 MHz typical transition frequency.
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FJV3114RMTF

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FJV3114RMTF is an NPN pre-biased transistor from On Semiconductor. It features a 100 mA maximum collector current, 50 V collector-emitter breakdown voltage, and 250 MHz typical transition frequency.
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FJV3114RMTF Available from 2 distributors

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FJV3114RMTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Power
Resistor
Storage Temperature
Supplier Device Package
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJV3114RMTF Description

Short technical summary and product information.

The FJV3114RMTF is an NPN pre-biased bipolar junction transistor manufactured by ON Semiconductor. This small signal transistor integrates bias resistors, simplifying circuit design by reducing external component count. The device is rated for a maximum collector current of 100 mA and a maximum collector-emitter breakdown voltage of 50 V, with a maximum power dissipation of 200 mW.

 

Electrical characteristics include a minimum DC current gain (hFE) of 68 at 5 mA collector current and 5 V collector-emitter voltage. The maximum collector-emitter saturation voltage is 300 mV at a base current of 500 µA and collector current of 10 mA. The typical transition frequency is 250 MHz, making it suitable for switching and amplification applications up to VHF frequencies. The nominal base resistor value is 47 kΩ.

 

The transistor is housed in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59), with SMD termination style. This compact package is well-suited for automated assembly in high-density PCB designs.

FJV3114RMTF Quick Information

Product Type: Pre-Biased Bipolar Transistor
Canonical Name: FJV3114RMTF NPN Pre-Biased Transistor
Subcategory: Pre-Biased

FJV3114RMTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FJV3114RMTF Estimated Pricing

Qty Low High
27,000+ $0.02 $0.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJV3114RMTF Features

  • NPN pre-biased transistor with 47 kΩ base resistor.
  • 100 mA maximum collector current rating.
  • 50 V collector-emitter breakdown voltage.
  • 250 MHz typical transition frequency.
  • Surface-mount SOT-23-3 package.

FJV3114RMTF Applications

  • Used in low-power switching circuits.
  • Suitable for signal amplification stages.
  • Ideal for space-constrained PCB designs.
  • Simplifies biasing in digital logic interfaces.

FJV3114RMTF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector current of the FJV3114RMTF?

The maximum collector current is 100 mA.

What is the collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage is 50 V.

What is the package type for this transistor?

The transistor is available in a surface-mount SOT-23-3 package.

What is the typical transition frequency?

The typical transition frequency is 250 MHz.

What is the DC current gain (hFE) of the FJV3114RMTF?

The minimum DC current gain is 68 at Ic=5mA and Vce=5V.

What is the maximum power dissipation?

The maximum power dissipation is 200 mW.

What is the nominal base resistor value?

The nominal base resistor value is 47 kΩ.

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