FJV3113RMTF NPN pre-biased transistor from On Semiconductor with 50V Vce, 100mA Ic, and integrated 47kΩ base resistor. Surface mount in SOT-23-3 package.
Mfr Part #:

FJV3113RMTF

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN pre-biased transistor from On Semiconductor with 50V Vce, 100mA Ic, and integrated 47kΩ base resistor. Surface mount in SOT-23-3 package.
✓ Total Stock: 681,000 pcs
$ Price Range: $0.03

FJV3113RMTF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
361,600 pcs
361600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
319,400 pcs
319400 pcs On Request 1 On Request On Request On Request On Request On Request

FJV3113RMTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJV3113RMTF Description

Short technical summary and product information.

The FJV3113RMTF is an NPN pre-biased bipolar junction transistor manufactured by On Semiconductor. It integrates a 47 kΩ base resistor, simplifying circuit design by reducing external component count. The device is rated for a collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a power dissipation of 200 mW.

 

Electrical characteristics include a minimum DC current gain (hFE) of 68 at Ic=5 mA, Vce=5 V, and a maximum Vce saturation voltage of 300 mV at Ib=500 µA, Ic=10 mA. The transistor offers a transition frequency of 250 MHz, making it suitable for switching and amplification applications up to moderate frequencies.

 

The FJV3113RMTF is supplied in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59), enabling compact PCB layouts. It is designed for general-purpose switching and signal processing in low-power circuits.

FJV3113RMTF Quick Information

Product Type: Pre-Biased Bipolar Transistor
Canonical Name: FJV3113RMTF NPN Pre-Biased Transistor
Subcategory: Single, Pre-Biased Bipolar Transistor

FJV3113RMTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJV3113RMTF Estimated Pricing

Qty Low High
10,042+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJV3113RMTF Features

  • NPN pre-biased transistor with 47kΩ base resistor.
  • Rated for 50V collector-emitter voltage.
  • 100mA continuous collector current capability.
  • Surface mount SOT-23-3 package.
  • 250 MHz transition frequency.

FJV3113RMTF Applications

  • General purpose low-power switching circuits.
  • Signal amplification in portable electronics.
  • Interface circuits for microcontrollers and logic.
  • Driver stages for small loads and relays.

FJV3113RMTF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FJV3113RMTF?

The collector-emitter voltage (Vce) is rated at 50 V.

What is the maximum collector current for this transistor?

The maximum continuous collector current (Ic) is 100 mA.

What package does the FJV3113RMTF come in?

It is supplied in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59).

Does the FJV3113RMTF have a built-in base resistor?

Yes, it integrates a 47 kΩ base resistor.

What is the DC current gain (hFE) of the FJV3113RMTF?

The minimum hFE is 68 at Ic=5 mA and Vce=5 V.

What is the transition frequency of this transistor?

The transition frequency (ft) is 250 MHz.

Is the FJV3113RMTF RoHS compliant?

It is listed as RoHS3 Compliant, though this status is unverified.

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