| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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723,200 pcs
|
723200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FJV3109RMTF is an NPN epitaxial silicon pre-biased transistor from On Semiconductor (formerly Fairchild Semiconductor). It integrates a bias resistor (R = 4.7 kΩ typical, 3.2 kΩ min, 6.2 kΩ max) in a single SOT-23-3 surface mount package, simplifying circuit design and saving board space.
Key electrical characteristics include a maximum collector-emitter voltage of 40 V, continuous collector current of 100 mA, and power dissipation of 200 mW. DC current gain (hFE) ranges from 100 to 600 at VCE = 5 V, IC = 1 mA. The transistor offers a transition frequency of 250 MHz and output capacitance of 3.7 pF, making it suitable for low-power switching and driver applications.
Typical applications include switching circuits, inverters, interface circuits, and driver circuits. The device is complementary to the PNP type FJV4109R. It is rated for a junction temperature of up to 150 °C and can be stored from -55 °C to 150 °C. The package is also known as TO-236-3 and SC-59. RoHS3 compliance is indicated but unverified.
40 V
SOT-23-3 (also available as TO-236-3 and SC-59)
150 °C
RoHS3 compliant (unverified)
100 to 600 at VCE=5V, IC=1mA
4.7 kΩ typical (range 3.2 kΩ to 6.2 kΩ)
FJV4109R