| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
127,675 pcs
|
127675 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJV3101RMTF is an NPN pre-biased transistor manufactured by ON Semiconductor. It integrates a bias resistor (R1 = 4.7 kΩ) in a single SOT-23-3 surface-mount package, simplifying circuit design by reducing external component count.
Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 50 V, a continuous collector current (Ic) of 100 mA, and a power dissipation of 200 mW. The device offers a minimum DC current gain (hFE) of 20 at 10 mA collector current and 5 V Vce, with a maximum collector-emitter saturation voltage of 300 mV at 500 µA base current and 10 mA collector current. The transition frequency (ft) is 250 MHz, making it suitable for low-frequency switching and amplification applications.
The transistor is housed in a TO-236-3 / SC-59 / SOT-23-3 package, designed for surface-mount assembly. It is commonly used in general-purpose switching, signal amplification, and interface circuits where space and component count are critical.
| Qty | Low | High |
|---|---|---|
| 6,667+ | $0.05 | $0.05 |
| 27,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50 V.
It is available in a TO-236-3, SC-59, SOT-23-3 surface-mount package (supplier device package SOT-23-3).
The part is listed as RoHS3 Compliant, but this status is unverified and should be treated as low confidence.
The maximum continuous collector current is 100 mA.
The power dissipation is 200 mW.
The integrated base resistor (R1) is 4.7 kΩ.
The transition frequency is 250 MHz.