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FJV1845PMTF FJV1845PMTF is an NPN bipolar junction transistor from On Semiconductor. It features a maximum collector-emitter voltage of 120V, collector current of 50mA, and power dissipation of 300mW.
Mfr Part #:

FJV1845PMTF

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FJV1845PMTF is an NPN bipolar junction transistor from On Semiconductor. It features a maximum collector-emitter voltage of 120V, collector current of 50mA, and power dissipation of 300mW.
✓ Total Stock: 735,200 pcs

FJV1845PMTF Available from 2 distributors

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✓ Non-Authorised
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Romaks Technologies ✓
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723,200 pcs
On Request
723200 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
12,000 pcs
On Request
12000 pcs On Request 1 On Request On Request On Request On Request On Request
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FJV1845PMTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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FJV1845PMTF Description

Short technical summary and product information.

The FJV1845PMTF is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and low current.

 

Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 120V, a maximum collector current (Ic) of 50mA, and a maximum power dissipation of 300mW. The device offers a minimum DC current gain (hFE) of 200 at 1mA collector current and 6V collector-emitter voltage, and a typical transition frequency (ft) of 110MHz. The maximum collector-emitter saturation voltage (Vce(sat)) is 300mV at a base current of 1mA and collector current of 10mA.

 

The transistor is housed in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59), making it suitable for compact PCB designs. The maximum operating junction temperature is 150°C.

FJV1845PMTF Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: FJV1845
Canonical Name: FJV1845PMTF NPN Bipolar Transistor
Subcategory: Single NPN

FJV1845PMTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJV1845PMTF Features

  • NPN bipolar junction transistor design.
  • 120V maximum collector-emitter voltage.
  • 50mA maximum collector current rating.
  • 300mW maximum power dissipation capability.
  • 110MHz typical transition frequency.

FJV1845PMTF Applications

  • General purpose low-power switching circuits.
  • Signal amplification in audio and control systems.
  • Driver stages for small loads and relays.
  • Used in portable and battery-powered electronics.

FJV1845PMTF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the FJV1845PMTF?

The maximum collector-emitter voltage (Vceo) is 120V.

What is the maximum collector current rating?

The maximum collector current (Ic) is 50mA.

What is the package type of the FJV1845PMTF?

The transistor is available in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59).

What is the operating temperature range?

The maximum operating junction temperature is 150°C.

Is the FJV1845PMTF RoHS compliant?

The part is listed as RoHS3 compliant, but this information is unverified.

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