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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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325,803 pcs
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325803 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FJV1845EMTF is an NPN bipolar junction transistor manufactured by On Semiconductor. Designed for general-purpose switching and amplification applications, this transistor offers a maximum collector-emitter voltage (Vceo) of 120V and a maximum collector current (Ic) of 50mA. It provides a minimum DC current gain (hFE) of 400 at 1mA collector current and 6V collector-emitter voltage, ensuring consistent performance in low-current signal processing.
With a maximum power dissipation of 300mW and a maximum operating junction temperature of 150°C, the device is suitable for moderate power applications. The transistor features a typical transition frequency (ft) of 110MHz, making it appropriate for low-frequency amplification and switching circuits.
The FJV1845EMTF is housed in a SOT-23-3 surface mount package (also known as TO-236-3 or SC-59), which is widely used in compact electronic assemblies. The surface mount design facilitates automated assembly and is ideal for space-constrained PCB layouts.
| Qty | Low | High |
|---|---|---|
| 27,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 120V.
The maximum collector current (Ic) is 50mA.
The device is available in a SOT-23-3 surface mount package (also known as TO-236-3 or SC-59).
The maximum operating junction temperature (TJ) is 150°C.
The minimum DC current gain (hFE) is 400 at Ic=1mA and Vce=6V.
The typical transition frequency (ft) is 110MHz.
The maximum power dissipation (Pd) is 300mW.