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FJPF5027RTU NPN silicon transistor with 800V collector-emitter voltage and 3A DC collector current. Suitable for high voltage switching applications.
Mfr Part #:

FJPF5027RTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN silicon transistor with 800V collector-emitter voltage and 3A DC collector current. Suitable for high voltage switching applications.
✓ Total Stock: 5,328 pcs
$ Price Range: $0.40

FJPF5027RTU Available from 1 distributor

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✓ Non-Authorised
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5,328 pcs
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FJPF5027RTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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FJPF5027RTU Description

Short technical summary and product information.

The FJPF5027RTU is an NPN silicon bipolar junction transistor from On Semiconductor (onsemi). It features a collector-emitter voltage (VCEO) of 800V and a collector-base voltage (VCBO) of 1100V, making it suitable for high voltage switching circuits. The continuous collector current rating is 3A, with a pulse capability of 10A. DC current gain (hFE) ranges from 15 to 30 at 200mA collector current, and the collector-emitter saturation voltage is typically 2V at 1.5A. The transistor offers a current gain bandwidth product of 15MHz and fast switching times with turn-on time of 0.5µs and fall time of 0.3µs. It is housed in a TO-220F-3 full pack through-hole package, providing isolation and ease of mounting. The device is Pb-Free as stated in the datasheet.

FJPF5027RTU Quick Information

Product Type: Bipolar Transistor (BJT) - Single
Canonical Name: FJPF5027RTU NPN Silicon Transistor
Subcategory: NPN Single

FJPF5027RTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FJPF5027RTU Estimated Pricing

Qty Low High
2,000+ $0.40 $0.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJPF5027RTU Features

  • 800V collector-emitter voltage rating.
  • 3A continuous collector current.
  • High speed switching capability.
  • Pb-Free and RoHS compliant.
  • TO-220F-3 through-hole package.

FJPF5027RTU Applications

  • Used in power supply switching circuits.
  • Ideal for high voltage inverters.
  • Suitable for motor control applications.
  • Used in lighting ballasts.

FJPF5027RTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FJPF5027RTU?

The collector-emitter voltage (VCEO) is 800V.

What is the maximum collector current?

The DC collector current is 3A, with a pulse current of 10A.

What package does the FJPF5027RTU come in?

It comes in a TO-220F-3 full pack through-hole package.

What is the operating junction temperature range?

The junction temperature is rated up to 150°C, and storage temperature range is -55 to 150°C.

Is the FJPF5027RTU RoHS compliant?

The datasheet states it is a Pb-Free device, indicating RoHS compliance, but the RoHS status is unverified.

What is the DC current gain (hFE) of this transistor?

The DC current gain (hFE) is 15 to 30 at Ic=200mA, Vce=5V, and a minimum of 8 at Ic=1A, Vce=5V.

What is the collector-emitter saturation voltage?

The collector-emitter saturation voltage (VCE(sat)) is a maximum of 2V at Ib=300mA, Ic=1.5A.

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