FJPF5027OTU NPN bipolar junction transistor with 800V collector-emitter voltage, 3A collector current, and 40W power dissipation. Housed in a TO-220F-3 through-hole package.
Mfr Part #:

FJPF5027OTU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar junction transistor with 800V collector-emitter voltage, 3A collector current, and 40W power dissipation. Housed in a TO-220F-3 through-hole package.
Total Stock: 594 pcs

FJPF5027OTU Available from 2 distributors

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539 pcs
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FJPF5027OTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current (Pulse)
Collector-Base Voltage
Current
DC Current Gain (Minimum @ IC = -1 A, VCE = -5 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Fall Time
Frequency
Mounting Type
Operating Temperature
Output Capacitance
Power
Storage Temperature
Storage Time
Supplier Device Package
Transistor Type
Turn On Time
Vbe Saturation (Max) @ Ib, Ic
Vce Saturation (Max) @ Ib, Ic
Voltage

FJPF5027OTU Description

Short technical summary and product information.

The FJPF5027OTU is an NPN silicon transistor from On Semiconductor designed for high-voltage and high-speed switching applications. It features a collector-base voltage of 1100V, collector-emitter voltage of 800V, and emitter-base voltage of 7V. The device can handle a continuous collector current of 3A and pulse current up to 10A.

 

Electrical characteristics include a DC current gain (hFE) of minimum 20 at 200mA/5V and minimum 8 at 1A/5V. Collector-emitter saturation voltage is maximum 2V at 1.5A/300mA, and base-emitter saturation voltage is maximum 1.5V. Output capacitance is typical 60pF, and current gain bandwidth product is typical 15MHz. Switching times are specified as turn-on 0.5µs, storage 3µs, and fall 0.3µs.

 

Thermal characteristics include a power dissipation of 40W at 25°C case temperature, maximum junction temperature of 150°C, and storage temperature range of -55 to 150°C. The device is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, providing isolation.

 

Compliance information indicates the part is Pb-Free and listed as RoHS3 compliant, with MSL 1 (unlimited) and REACH unaffected. Note that RoHS compliance is unverified; the datasheet confirms Pb-Free status.

FJPF5027OTU Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: FJPF5027OTU NPN Silicon Transistor
Subcategory: NPN Single BJT

FJPF5027OTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FJPF5027OTU Features

  • High voltage NPN BJT transistor.
  • 800V collector-emitter voltage rating.
  • 3A continuous collector current capability.
  • 40W power dissipation at 25°C.
  • Fast switching with 0.5µs turn-on time.

FJPF5027OTU Applications

  • Power switching circuits in power supplies.
  • High voltage inverter stages.
  • Motor control applications.
  • Lighting ballast circuits.

FJPF5027OTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FJPF5027OTU?

800V minimum.

What is the maximum collector current?

3A DC and 10A pulse.

What is the package type?

TO-220-3 Full Pack (TO-220F-3).

What is the operating junction temperature?

150°C maximum.

Is the FJPF5027OTU RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified. The datasheet confirms Pb-Free status.

What is the DC current gain (hFE) at 200mA?

Minimum 20 at Vce=5V, Ic=200mA.

What are the switching times?

Turn-on time 0.5µs, storage time 3µs, fall time 0.3µs (test conditions: Vcc=400V, Ic=5A, Ib1=-Ib2=2A, Rl=200Ω).

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