FJPF3305H2TU NPN bipolar junction transistor rated for 400V collector-emitter voltage and 4A collector current, in a TO-220-3 Full Pack through-hole package.
Mfr Part #:

FJPF3305H2TU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar junction transistor rated for 400V collector-emitter voltage and 4A collector current, in a TO-220-3 Full Pack through-hole package.
Total Stock: 6,668 pcs
$ Price Range: $0.85

FJPF3305H2TU Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,400 pcs
5400 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
1,268 pcs
1268 pcs On Request 1 On Request On Request On Request On Request On Request

FJPF3305H2TU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJPF3305H2TU Description

Short technical summary and product information.

The FJPF3305H2TU is an NPN bipolar junction transistor from ON Semiconductor designed for medium-power switching and amplification applications. It features a maximum collector-emitter voltage (Vceo) of 400V and a continuous collector current (Ic) rating of 4A, making it suitable for circuits requiring high voltage handling with moderate current.

 

With a maximum power dissipation of 30W and a junction temperature rating of up to 150°C, this transistor can operate reliably in thermally demanding environments. The DC current gain (hFE) is a minimum of 26 at 1A collector current and 5V collector-emitter voltage, and the typical transition frequency (ft) is 4 MHz.

 

The device is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, which provides full isolation and simplifies heatsink mounting. The saturation voltage (Vce sat) is a maximum of 1V at a base current of 1A and collector current of 4A, ensuring efficient switching performance.

FJPF3305H2TU Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: FJPF3305
Canonical Name: FJPF3305H2TU NPN Bipolar Transistor
Subcategory: Single NPN

FJPF3305H2TU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJPF3305H2TU Estimated Pricing

Qty Low High
355+ $0.85 $0.85

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJPF3305H2TU Features

  • NPN bipolar junction transistor design.
  • Rated for 400V collector-emitter voltage.
  • Supports 4A continuous collector current.
  • 30W maximum power dissipation capability.
  • TO-220-3 Full Pack isolated package.

FJPF3305H2TU Applications

  • Used in high-voltage switching power supplies.
  • Suitable for motor control circuits.
  • Ideal for inverter and converter stages.
  • Applicable in general-purpose amplification.

FJPF3305H2TU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (Vceo) of the FJPF3305H2TU?

The maximum collector-emitter voltage (Vceo) is 400V.

What is the maximum collector current rating?

The maximum collector current (Ic) is 4A.

What is the power dissipation of this transistor?

The maximum power dissipation (Pd) is 30W.

What package type does the FJPF3305H2TU use?

It uses a TO-220-3 Full Pack (TO-220F-3) through-hole package.

What is the operating junction temperature range?

The maximum junction temperature (Tj) is 150°C.

Is the FJPF3305H2TU RoHS compliant?

The part is listed as RoHS3 Compliant, but this is unverified. Please confirm with the official datasheet.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 26 at Ic=1A and Vce=5V.

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