FJPF3305H1TU FJPF3305H1TU is an NPN bipolar junction transistor from On Semiconductor with 400V Vce, 4A Ic, and 30W power dissipation in a TO-220F-3 through-hole package.
Mfr Part #:

FJPF3305H1TU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FJPF3305H1TU is an NPN bipolar junction transistor from On Semiconductor with 400V Vce, 4A Ic, and 30W power dissipation in a TO-220F-3 through-hole package.
Total Stock: 2,000 pcs
$ Price Range: $0.29

FJPF3305H1TU Available from 1 distributor

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FJPF3305H1TU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJPF3305H1TU Description

Short technical summary and product information.

The FJPF3305H1TU is an NPN bipolar junction transistor manufactured by ON Semiconductor. It features a collector-emitter breakdown voltage of 400V and a continuous collector current rating of 4A, making it suitable for medium-power switching and amplification applications.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 19 at 1A collector current and 5V Vce, a maximum Vce saturation voltage of 1V at 1A base current and 4A collector current, and a transition frequency of 4 MHz. The device can dissipate up to 30W of power and operates at a maximum junction temperature of 150°C.

 

The transistor is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, which provides a fully insulated case for easy mounting and heat sinking. The mounting type is through-hole, suitable for standard PCB assembly processes.

FJPF3305H1TU Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: FJPF3305
Canonical Name: FJPF3305H1TU NPN Bipolar Junction Transistor, 400V Vce, 4A Ic, TO-220F-3
Subcategory: Single NPN

FJPF3305H1TU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJPF3305H1TU Estimated Pricing

Qty Low High
2,000+ $0.29 $0.29

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJPF3305H1TU Features

  • NPN bipolar junction transistor design.
  • 400V collector-emitter breakdown voltage.
  • 4A continuous collector current rating.
  • 30W power dissipation capability.
  • TO-220F-3 through-hole full-pack package.

FJPF3305H1TU Applications

  • Used in medium-voltage power switching circuits.
  • Suitable for linear amplifier stages.
  • Applicable in DC-DC converter designs.
  • Ideal for motor drive control circuits.

FJPF3305H1TU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the FJPF3305H1TU?

The maximum collector-emitter voltage is 400V.

What is the maximum collector current rating?

The maximum collector current is 4A.

What package type does the FJPF3305H1TU use?

It uses a TO-220-3 Full Pack (TO-220F-3) through-hole package.

What is the operating temperature range?

The maximum junction temperature is 150°C.

What is the power dissipation of this transistor?

The power dissipation is 30W.

What is the DC current gain (hFE) of the FJPF3305H1TU?

The minimum DC current gain is 19 at Ic=1A and Vce=5V.

What is the transition frequency of this transistor?

The transition frequency is 4 MHz.

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