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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJPF3305H1TU is an NPN bipolar junction transistor manufactured by ON Semiconductor. It features a collector-emitter breakdown voltage of 400V and a continuous collector current rating of 4A, making it suitable for medium-power switching and amplification applications.
Key electrical characteristics include a minimum DC current gain (hFE) of 19 at 1A collector current and 5V Vce, a maximum Vce saturation voltage of 1V at 1A base current and 4A collector current, and a transition frequency of 4 MHz. The device can dissipate up to 30W of power and operates at a maximum junction temperature of 150°C.
The transistor is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, which provides a fully insulated case for easy mounting and heat sinking. The mounting type is through-hole, suitable for standard PCB assembly processes.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 400V.
The maximum collector current is 4A.
It uses a TO-220-3 Full Pack (TO-220F-3) through-hole package.
The maximum junction temperature is 150°C.
The power dissipation is 30W.
The minimum DC current gain is 19 at Ic=1A and Vce=5V.
The transition frequency is 4 MHz.