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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,247 pcs
|
2247 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
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| Operating Temperature | |
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| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJPF13009H1TU is a single NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for high-voltage switching applications, with a collector-emitter voltage rating of 400V and a continuous collector current capability of 12A. The device can dissipate up to 50W of power, making it suitable for power management circuits.
Key electrical characteristics include a minimum DC current gain (hFE) of 6 at a test condition of Ic=8A and Vce=5V, and a maximum collector-emitter saturation voltage of 3V at Ib=3A and Ic=12A. The transition frequency is 4 MHz, indicating its capability for moderate-speed switching operations. The operating junction temperature is rated up to 150°C.
The transistor is housed in a TO-220-3 Full Pack package with formed leads, also known as TO-220F-3 (Y-Forming). This through-hole mounting package provides robust mechanical support and efficient heat dissipation for power applications. The full-pack (isolated) design simplifies mounting by eliminating the need for an insulating washer in many designs.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.56 | $0.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) is 400V.
The maximum collector current (Ic) is 12A.
The power dissipation (Pc) is 50W.
It uses a TO-220-3 Full Pack with formed leads, also known as TO-220F-3 (Y-Forming).
The operating junction temperature (TJ) is rated up to 150°C.
The part is listed as RoHS3 Compliant, though this is unverified from source documents.
The minimum DC current gain (hFE) is 6 at Ic=8A and Vce=5V.