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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJP5555TU is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for high-voltage switching and amplification applications, offering a collector-emitter breakdown voltage of 400V and a continuous collector current rating of 5A.
The transistor can dissipate up to 75W, making it suitable for power circuits. It guarantees a minimum DC current gain (hFE) of 20 at Ic=800mA and Vce=3V, and features a maximum Vce saturation voltage of 1.5V at Ib=1A and Ic=3.5A. The maximum junction operating temperature is specified as 150°C.
The device is housed in a TO-220-3 through-hole package, which supports straightforward mounting on PCBs and can be used with a heatsink for higher power dissipation. This packaging makes it appropriate for power switching and amplification stages in industrial and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.65 | $1.65 |
| 10+ | $1.04 | $1.04 |
| 100+ | $0.70 | $0.70 |
| 500+ | $0.55 | $0.55 |
| 1,000+ | $0.50 | $0.50 |
| 2,000+ | $0.46 | $0.46 |
| 5,000+ | $0.42 | $0.42 |
| 10,000+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
400V.
TO-220-3 through-hole package.
150°C.
The existing database lists the part as RoHS3 compliant, but the status is unverified.
5A.
75W.
1.5V at Ib=1A and Ic=3.5A.