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FJP5304DTU FJP5304DTU is a single NPN bipolar junction transistor from On Semiconductor. It features a 400V collector-emitter breakdown voltage, 4A collector current, and 70W power dissipation in a TO-220-3 through-hole package.
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FJP5304DTU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FJP5304DTU is a single NPN bipolar junction transistor from On Semiconductor. It features a 400V collector-emitter breakdown voltage, 4A collector current, and 70W power dissipation in a TO-220-3 through-hole package.
✓ Total Stock: 96,145 pcs

FJP5304DTU Available from 2 distributors

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FJP5304DTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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FJP5304DTU Description

Short technical summary and product information.

FJP5304DTU is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for switching and amplification in circuits requiring up to 400V collector-emitter voltage and 4A collector current. The device has a maximum power dissipation of 70W and a minimum DC current gain of 8 at 2A collector current and 5V collector-emitter voltage. Saturation voltage is 1.5V maximum at a base current of 500mA and collector current of 2.5A.

 

The transistor is housed in a TO-220-3 through-hole package, which offers a metal tab for heat sinking and supports straightforward PCB mounting. This package is commonly used for power semiconductor components that need good thermal transfer.

 

Given its voltage and current ratings, FJP5304DTU can be applied in power supply circuits, motor control, and general-purpose high-voltage switching. Designers should respect the maximum ratings and ensure adequate base drive for the expected collector current.

FJP5304DTU Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: NPN Bipolar Transistor, 400V Vceo, 4A Ic, TO-220-3
Subcategory: Single Bipolar Junction Transistor

FJP5304DTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJP5304DTU Features

  • NPN bipolar transistor for switching applications.
  • 400V collector-emitter breakdown voltage rating.
  • 4A maximum continuous collector current.
  • 70W power dissipation with TO-220-3 package.
  • Through-hole TO-220-3 package for placement.

FJP5304DTU Applications

  • Ideal for high-voltage power switching circuits.
  • Used in 400V-class power converters.
  • Suitable for motor drive inverters.
  • Can be used in linear amplifier output stages.

FJP5304DTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the FJP5304DTU?

The maximum collector-emitter breakdown voltage is 400V.

What is the maximum collector current rating?

The maximum collector current is 4A.

What is the maximum power dissipation of this transistor?

The maximum power dissipation is 70W.

What is the minimum DC current gain at 2A collector current and 5V Vce?

The minimum DC current gain is 8.

What is the maximum Vce saturation voltage?

The maximum Vce saturation voltage is 1.5V at Ib=500mA and Ic=2.5A.

What package is the FJP5304DTU in?

The FJP5304DTU comes in a TO-220-3 through-hole package.

Is this part RoHS compliant?

The part is listed as RoHS3 compliant in existing data, but this status is unverified.

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