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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
222 pcs
|
222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJP5027RTU is an NPN bipolar junction transistor manufactured by ON Semiconductor. It features a collector-emitter breakdown voltage of 800V and a continuous collector current rating of 3A, making it suitable for high-voltage switching and amplification applications.
With a power dissipation of 50W and a maximum junction temperature of 150°C, this device can handle moderate power levels in through-hole designs. The DC current gain (hFE) is a minimum of 15 at 200mA collector current and 5V collector-emitter voltage, while the saturation voltage is a maximum of 2V at a base current of 300mA and collector current of 1.5A. The transition frequency is 15MHz.
The transistor is supplied in a TO-220-3 package with through-hole mounting, suitable for heatsinking in power circuits.
800V.
3A.
TO-220-3 through-hole package.
50W.
Maximum 150°C.
Minimum 15 at Ic=200mA, Vce=5V.
15MHz.