FJP5027OTU NPN bipolar junction transistor with 800V collector-emitter voltage and 3A collector current. Housed in a TO-220-3 through-hole package.
Mfr Part #:

FJP5027OTU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar junction transistor with 800V collector-emitter voltage and 3A collector current. Housed in a TO-220-3 through-hole package.
Total Stock: 7,100 pcs
$ Price Range: $0.83 - $2.79

FJP5027OTU Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,100 pcs
6100 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

FJP5027OTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJP5027OTU Description

Short technical summary and product information.

The FJP5027OTU is an NPN bipolar junction transistor from ON Semiconductor designed for high-voltage switching and linear amplification applications. It features a maximum collector-emitter voltage (Vceo) of 800V and a maximum collector current (Ic) of 3A, making it suitable for power supply and motor control circuits.

 

Electrical characteristics include a DC current gain (hFE) of minimum 20 at Ic=200mA and Vce=5V, a collector-emitter saturation voltage (Vce(sat)) of maximum 2V at Ib=300mA and Ic=1.5A, and a typical transition frequency (ft) of 15MHz. The device can dissipate up to 50W of power and operates with a maximum junction temperature of 150°C.

 

The transistor is packaged in a TO-220-3 through-hole package, which facilitates easy mounting on printed circuit boards. It is listed as RoHS3 compliant, with MSL 1 (unlimited) and REACH unaffected status, though these compliance claims are unverified.

FJP5027OTU Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: FJP5027
Canonical Name: NPN Bipolar Transistor, 800V, 3A, TO-220-3
Subcategory: Single BJT

FJP5027OTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJP5027OTU Estimated Pricing

Qty Low High
1+ $2.79 $2.79
50+ $1.38 $1.38
100+ $1.24 $1.24
500+ $1.00 $1.00
1,000+ $0.92 $0.92
2,000+ $0.86 $0.86
5,000+ $0.83 $0.83

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJP5027OTU Features

  • 800V maximum collector-emitter voltage.
  • 3A maximum collector current.
  • 50W power dissipation capability.
  • TO-220-3 through-hole package.
  • RoHS3 compliant.

FJP5027OTU Applications

  • Used in high-voltage switching circuits.
  • Suitable for power supply designs.
  • Ideal for motor control applications.
  • Employed in audio amplifier output stages.

FJP5027OTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

800V

What is the maximum collector current?

3A

What is the package type?

TO-220-3

What is the maximum junction temperature?

150°C

Is this component RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the DC current gain?

Minimum 20 at Ic=200mA, Vce=5V.

What is the power dissipation?

50W maximum.

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