FJP3305H2TU

The FJP3305H2TU is an NPN bipolar junction transistor manufactured by ON Semiconductor. It features a collector-emitter breakdown voltage of 400V and a continuous collector current rating of 4A, with a maximum power dissipation of 75W. The device offers a DC current gain (hFE) of at least 26 at a test condition of 1A collector current and 5V collector-emitter voltage. The collector-emitter saturation voltage is typically 1V at a base current of 1A and collector current of 4A. The transition frequency is 4 MHz. The maximum junction temperature is 150°C. The transistor is housed in a through-hole TO-220-3 package, which is compatible with standard PCB mounting and provides efficient heat dissipation. The device is also available with a supplier device package of TO-220-3. The part is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited) (unverified).

This transistor is suitable for various power switching and linear applications where high voltage and current handling are required. Its through-hole package allows for easy mounting on printed circuit boards or heat sinks.