FJP3305H1TU NPN bipolar junction transistor rated for 400V collector-emitter voltage and 4A collector current. Housed in a TO-220-3 through-hole package with 75W power dissipation.
Mfr Part #:

FJP3305H1TU

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar junction transistor rated for 400V collector-emitter voltage and 4A collector current. Housed in a TO-220-3 through-hole package with 75W power dissipation.
Total Stock: 164,281 pcs
$ Price Range: $0.54

FJP3305H1TU Available from 3 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
159,000 pcs
159000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,600 pcs
4600 pcs On Request 1 On Request On Request 15+ On Request On Request
Non-Authorised Inventory information
681 pcs
681 pcs On Request 1 On Request On Request 07+ On Request On Request

FJP3305H1TU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJP3305H1TU Description

Short technical summary and product information.

The FJP3305H1TU is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications requiring high voltage and moderate current handling.

 

Key electrical specifications include a collector-emitter voltage (Vce) of 400V, collector current (Ic) of 4A, and power dissipation of 75W. The DC current gain (hFE) is a minimum of 8 at Ic=2A, Vce=5V, and the collector-emitter saturation voltage (Vce(sat)) is a maximum of 1V at Ib=1A, Ic=4A. The transition frequency (fT) is 4 MHz.

 

The transistor is housed in a standard TO-220-3 through-hole package, suitable for mounting on heatsinks for thermal management. The operating junction temperature is rated up to 150°C.

 

This device is suitable for applications such as power supply circuits, motor drivers, and other power switching functions where high voltage capability is required.

FJP3305H1TU Quick Information

Product Type: NPN Bipolar Junction Transistor
Series: FJP3305
Canonical Name: FJP3305H1TU NPN Bipolar Junction Transistor, 400V, 4A, TO-220-3
Subcategory: Single NPN

FJP3305H1TU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJP3305H1TU Estimated Pricing

Qty Low High
555+ $0.54 $0.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJP3305H1TU Features

  • NPN bipolar junction transistor with 400V Vce rating.
  • Collector current capability up to 4A.
  • Power dissipation of 75W in TO-220-3 package.
  • Minimum DC current gain of 8 at 2A.
  • Operating junction temperature up to 150°C.

FJP3305H1TU Applications

  • Used in power supply switching circuits.
  • Suitable for motor driver stages.
  • Ideal for high-voltage general-purpose amplification.

FJP3305H1TU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FJP3305H1TU?

400V.

What package does the FJP3305H1TU come in?

TO-220-3 through-hole package.

What is the maximum operating junction temperature?

150°C.

Is the FJP3305H1TU RoHS compliant?

RoHS3 compliant (unverified).

What is the collector current rating?

4A.

What is the power dissipation?

75W.

What is the DC current gain (hFE)?

Minimum 8 at Ic=2A, Vce=5V.

Home
Account

Categories