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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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11,680 pcs
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11680 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FJP2160DTU is an NPN bipolar junction transistor from On Semiconductor designed for high-voltage switching and amplification applications. It features a collector-emitter voltage (Vce) rating of 800V, a continuous collector current (Ic) of 2A, and a power dissipation (Pd) of 100W. The DC current gain (hFE) is a minimum of 20 at 400mA and 3V, and the collector-emitter saturation voltage (Vce sat) is 750mV maximum at 1A and 330mA base current. The transistor has a transition frequency (ft) of 5MHz, making it suitable for switching circuits operating at moderate frequencies.
The device is housed in a TO-220-3 through-hole package, offering robust thermal performance and easy mounting on heatsinks. It is designed for an operating junction temperature range of -55°C to 125°C, ensuring reliability in harsh environments. Typical applications include power supply inverters, motor control, and general purpose high-voltage switching. The component is RoHS3 compliant, though this status is unverified, and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.36 | $0.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 800V.
The maximum collector current is 2A.
The power dissipation is 100W.
The minimum DC current gain is 20 at 400mA collector current and 3V collector-emitter voltage.
The transition frequency is 5MHz.
The transistor is available in a TO-220-3 through-hole package.
The component is marked as RoHS3 Compliant, but this status is unverified and has low confidence.