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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJP13009H2TU is an NPN bipolar junction transistor manufactured by ON Semiconductor. It features a collector-emitter breakdown voltage of 400 V and a continuous collector current rating of 12 A, with a maximum power dissipation of 100 W. The device offers a DC current gain (hFE) of at least 15 at Ic=5 A and Vce=5 V, and a collector-emitter saturation voltage of up to 3 V at Ib=3 A and Ic=12 A. The transition frequency is 4 MHz.
The transistor is designed for through-hole mounting and is supplied in a TO-220-3 package. The maximum junction temperature is 150°C. This component is suitable for switching and amplification applications requiring high voltage and moderate current handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.50 | $3.50 |
| 50+ | $1.76 | $1.76 |
| 100+ | $1.59 | $1.59 |
| 500+ | $1.30 | $1.30 |
| 1,000+ | $1.20 | $1.20 |
| 2,000+ | $1.13 | $1.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
400 V.
12 A.
100 W.
Minimum 15.
TO-220-3 through-hole package.
150°C.
RoHS3 Compliant (unverified).