FJP13009H2TU NPN bipolar junction transistor with 400V collector-emitter breakdown voltage and 12A collector current. Housed in a TO-220-3 through-hole package.
Mfr Part #:

FJP13009H2TU

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar junction transistor with 400V collector-emitter breakdown voltage and 12A collector current. Housed in a TO-220-3 through-hole package.
Total Stock: 8,000 pcs
$ Price Range: $1.13 - $3.50

FJP13009H2TU Available from 3 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request 24+ On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

FJP13009H2TU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJP13009H2TU Description

Short technical summary and product information.

The FJP13009H2TU is an NPN bipolar junction transistor manufactured by ON Semiconductor. It features a collector-emitter breakdown voltage of 400 V and a continuous collector current rating of 12 A, with a maximum power dissipation of 100 W. The device offers a DC current gain (hFE) of at least 15 at Ic=5 A and Vce=5 V, and a collector-emitter saturation voltage of up to 3 V at Ib=3 A and Ic=12 A. The transition frequency is 4 MHz.

 

The transistor is designed for through-hole mounting and is supplied in a TO-220-3 package. The maximum junction temperature is 150°C. This component is suitable for switching and amplification applications requiring high voltage and moderate current handling.

FJP13009H2TU Quick Information

Product Type: Bipolar (BJT) Transistor
Series: FJP13009
Canonical Name: FJP13009H2TU NPN Bipolar Transistor
Subcategory: Single NPN

FJP13009H2TU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJP13009H2TU Estimated Pricing

Qty Low High
1+ $3.50 $3.50
50+ $1.76 $1.76
100+ $1.59 $1.59
500+ $1.30 $1.30
1,000+ $1.20 $1.20
2,000+ $1.13 $1.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJP13009H2TU Features

  • NPN bipolar junction transistor with 400V Vceo.
  • Continuous collector current rating of 12A.
  • Maximum power dissipation of 100W.
  • TO-220-3 through-hole package for easy mounting.
  • Transition frequency of 4MHz.

FJP13009H2TU Applications

  • Switching power supply circuits
  • Power inverter stage transistors
  • Motor drive switching applications
  • High voltage switching regulators
  • Power conversion in industrial equipment

FJP13009H2TU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the FJP13009H2TU?

400 V.

What is the maximum collector current rating?

12 A.

What is the power dissipation rating?

100 W.

What is the DC current gain (hFE) at 5A, 5V?

Minimum 15.

What package is the FJP13009H2TU available in?

TO-220-3 through-hole package.

What is the maximum operating junction temperature?

150°C.

Is the FJP13009H2TU RoHS compliant?

RoHS3 Compliant (unverified).

Home
Account

Categories