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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,000 pcs
|
90000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
116 pcs
|
116 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (DC) | |
| Collector Current (Pulse) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (Typical) | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Typical) | |
| Power | |
| Storage Temperature | |
| Storage Temperature Range | |
| Storage Time (Typical) | |
| Supplier Device Package | |
| Transistor Type | |
| Turn-On Time (Typical) | |
| Vbe(sat) (Maximum @ Ic=2 A, Ib=0.4 A) | |
| Vbe(sat) (Maximum @ Ic=5 A, Ib=1 A) | |
| Vce Sat (Maximum @ Ic=2 A, Ib=0.4 A) | |
| Vce Sat (Maximum @ Ic=5 A, Ib=1 A) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hfe (Minimum/Maximum @ Ic=5 A, Vce=5 V) |
The FJP13007H2TU is a high voltage fast-switching NPN power transistor from On Semiconductor, designed for power switching applications such as electronic ballasts and switching mode power supplies.
This transistor features a maximum collector-emitter voltage of 400V, a collector-base voltage of 700V, and a continuous collector current rating of 8A (16A pulse). Power dissipation is rated at 80W at a case temperature of 25°C, with a maximum junction temperature of 150°C.
Electrical characteristics include a minimum DC current gain (hFE) of 26 at Ic=2A, Vce=5V, and a typical current gain bandwidth product of 4 MHz. Switching performance is characterized by a typical turn-on time of 1.6μs, storage time of 3.0μs, and fall time of 0.7μs under test conditions.
The device is offered in a TO-220-3 through-hole package, suitable for mounting on printed circuit boards with heatsinking. The H2 suffix indicates a specific hFE classification range of 26-39.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.58 | $2.58 |
| 50+ | $1.26 | $1.26 |
| 100+ | $1.13 | $1.13 |
| 500+ | $0.91 | $0.91 |
| 1,000+ | $0.83 | $0.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 400V.
The maximum continuous collector current is 8A, and the pulse current is 16A.
The device is packaged in a TO-220-3 through-hole package.
The maximum junction temperature is 150°C, with a storage temperature range of -65 to 150°C.
The device is listed as RoHS3 compliant, but this status is unverified.
The minimum DC current gain (hFE) is 26 at Ic=2A, Vce=5V.
Typical switching times are: turn-on 1.6μs, storage time 3.0μs, and fall time 0.7μs (test conditions: Vcc=125V, Ic=5A, Ib1=Ib2=1A).