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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,474 pcs
|
4474 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Pulse) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (VCEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Storage Temperature | |
| Storage Temperature Range | |
| Storage Time (ts) | |
| Supplier Device Package | |
| Transistor Type | |
| Turn-On Time (ton) | |
| Vce Sat (Maximum @ Ic=2 A, Ib=0.4 A) | |
| Vce Sat (Maximum @ Ic=5 A, Ib=1 A) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hfe (Minimum/Maximum @ Ic=5 A, Vce=5 V) |
The FJP13007H1TU-F080 is a high voltage fast-switching NPN power transistor manufactured by On Semiconductor. It is designed for power switch applications requiring high voltage capability and high switching speed.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 400V minimum, collector-base voltage (VCBO) of 700V maximum, and emitter-base voltage (VEBO) of 9V maximum. The continuous collector current is rated at 8A, with a pulse current capability of 16A. Power dissipation is 80W at case temperature 25°C. DC current gain (hFE) ranges from 8 to 60 at 2A collector current and 5V Vce, and from 5 to 30 at 5A. The transistor offers a typical gain-bandwidth product of 4MHz and output capacitance of 110pF.
This device is suitable for applications such as electronic ballasts and switching mode power supplies. It features fast switching times with typical turn-on time of 1.6μs, storage time of 3.0μs, and fall time of 0.7μs under test conditions. The saturation voltages are low, with Vce(sat) maximum of 1.0V at 2A/0.4A base current, 2.0V at 5A/1A, and 3.0V at 8A/2A.
The FJP13007H1TU-F080 is packaged in a TO-220-3 through-hole package. The operating junction temperature range is up to 150°C, with storage temperature range from -65°C to 150°C. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 2,100+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage is 400V at Ic=10mA and Ib=0.
The continuous collector current is 8A, and the pulse current rating is 16A.
It is available in a TO-220-3 through-hole package.
The junction temperature maximum is 150°C, and the storage temperature range is -65°C to 150°C.
Yes, it is RoHS3 compliant, but this information is unverified and has low confidence.
The DC current gain is between 8 and 60 at Ic=2A and Vce=5V.
Typical turn-on time is 1.6μs, storage time is 3.0μs, and fall time is 0.7μs under test conditions of Vcc=125V, Ic=5A, Ib1=Ib2=1A, RL=25Ω.