| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,995 pcs
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7995 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FJN4309RTA is a PNP pre-biased bipolar junction transistor manufactured by ON Semiconductor. It integrates a 4.7kΩ base resistor, simplifying circuit design by reducing external component count. The transistor is rated for a maximum collector-emitter voltage of 40V and a maximum collector current of 100mA, with a power dissipation of 300mW. It offers a DC current gain (hFE) of at least 100 at 1mA collector current and 5V collector-emitter voltage, and a transition frequency of 200MHz, making it suitable for low-frequency switching and amplification applications. The device is housed in a through-hole TO-92-3 package, which is compatible with standard PCB layouts. Typical applications include general purpose switching, driver circuits, and signal amplification in consumer and industrial electronics.
| Qty | Low | High |
|---|---|---|
| 8,163+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
TO-92-3 (TO-226-3) through-hole package.
RoHS3 compliant.
4.7kΩ.
Minimum 100 at Ic=1mA, Vce=5V.
300mW.
200MHz.