FJN4305RTA The FJN4305RTA is a PNP pre-biased bipolar transistor from On Semiconductor. It features a built-in 10kΩ base resistor, 100mA maximum collector current, and 50V collector-emitter breakdown voltage.
Mfr Part #:

FJN4305RTA

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FJN4305RTA is a PNP pre-biased bipolar transistor from On Semiconductor. It features a built-in 10kΩ base resistor, 100mA maximum collector current, and 50V collector-emitter breakdown voltage.
Total Stock: 4,000 pcs
$ Price Range: $0.04

FJN4305RTA Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request

FJN4305RTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJN4305RTA Description

Short technical summary and product information.

The FJN4305RTA is a PNP pre-biased bipolar junction transistor manufactured by On Semiconductor. It integrates a 10kΩ base resistor, simplifying circuit design by reducing external component count.

 

This transistor offers a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. It has a DC current gain (hFE) of minimum 30 at 5mA collector current and 5V Vce. The maximum power dissipation is 300mW. The collector-emitter saturation voltage is 300mV at 500µA base current and 10mA collector current. The typical transition frequency is 200MHz.

 

The device is housed in a TO-226-3, TO-92-3 (TO-226AA) package with formed leads, suitable for through-hole mounting. The supplier device package is TO-92-3.

 

Pre-biased transistors are commonly used in switching and amplification circuits where a stable bias is required. The built-in resistor reduces component count and board space. This part is RoHS3 compliant and has an MSL of 1 (unlimited).

FJN4305RTA Quick Information

Product Type: PNP Pre-Biased Bipolar Transistor
Canonical Name: FJN4305RTA PNP Pre-Biased Transistor
Subcategory: Pre-Biased Transistor

FJN4305RTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FJN4305RTA Estimated Pricing

Qty Low High
6,916+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJN4305RTA Features

  • PNP pre-biased with 10kΩ base resistor.
  • Maximum collector current of 100mA.
  • Collector-emitter breakdown voltage of 50V.
  • Power dissipation rated at 300mW.
  • Through-hole TO-92-3 package.

FJN4305RTA Applications

  • Ideal for low-power switching circuits.
  • Used in signal amplification stages.
  • Suitable for driver circuits in consumer electronics.
  • Common in pre-biased transistor arrays.

FJN4305RTA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the FJN4305RTA?

50V maximum.

What is the maximum collector current?

100mA.

Does the FJN4305RTA have a built-in base resistor?

Yes, it has a 10kΩ base resistor.

What is the package type?

TO-226-3, TO-92-3 (TO-226AA) with formed leads.

Is the FJN4305RTA RoHS compliant?

Yes, it is RoHS3 compliant (unverified).

What is the DC current gain (hFE)?

Minimum 30 at Ic=5mA, Vce=5V.

What is the power dissipation?

300mW maximum.

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