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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJN4305RTA is a PNP pre-biased bipolar junction transistor manufactured by On Semiconductor. It integrates a 10kΩ base resistor, simplifying circuit design by reducing external component count.
This transistor offers a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. It has a DC current gain (hFE) of minimum 30 at 5mA collector current and 5V Vce. The maximum power dissipation is 300mW. The collector-emitter saturation voltage is 300mV at 500µA base current and 10mA collector current. The typical transition frequency is 200MHz.
The device is housed in a TO-226-3, TO-92-3 (TO-226AA) package with formed leads, suitable for through-hole mounting. The supplier device package is TO-92-3.
Pre-biased transistors are commonly used in switching and amplification circuits where a stable bias is required. The built-in resistor reduces component count and board space. This part is RoHS3 compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 6,916+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V maximum.
100mA.
Yes, it has a 10kΩ base resistor.
TO-226-3, TO-92-3 (TO-226AA) with formed leads.
Yes, it is RoHS3 compliant (unverified).
Minimum 30 at Ic=5mA, Vce=5V.
300mW maximum.