| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,384 pcs
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3384 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FJN4303RTA is a PNP pre-biased bipolar junction transistor manufactured by ON Semiconductor. This device integrates a 22kΩ base resistor internally, simplifying circuit designs by reducing external component count. It supports a collector-emitter voltage of 50V and a collector current of 100mA, with a maximum power dissipation of 300mW.
The transistor offers a minimum DC current gain (hFE) of 56 at 5mA/5V, a saturation voltage of 300mV maximum at 500µA/10mA, and a transition frequency of 200MHz. With a TO-92-3 through-hole package, the FJN4303RTA is suitable for low-power switching and signal amplification applications.
The component is RoHS3 compliant according to existing database records, though this has not been independently verified. It is commonly used in low-frequency amplifier stages, interface circuits, and general-purpose switching.
The FJN4303RTA supports a collector-emitter voltage of 50V.
The FJN4303RTA comes in a TO-92-3 through-hole package, also listed as TO-226-3 (TO-226AA) with formed leads.
According to existing database records, the FJN4303RTA is RoHS3 compliant, though this is not independently verified.
The FJN4303RTA can handle a collector current of 100mA.
The FJN4303RTA integrates a 22kΩ base resistor (R1).
The minimum DC current gain (hFE) is 56 at Ic=5mA, Vce=5V.
The transition frequency (ft) is 200MHz.