| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,297 pcs
|
37297 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Termination Style | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJN4302RTA is a PNP pre-biased transistor from On Semiconductor, designed for low-power switching and amplification applications. It integrates a 10kΩ base resistor, simplifying circuit design by reducing external component count.
Key electrical specifications include a collector-emitter breakdown voltage of 50V, a continuous collector current of 100mA, and a maximum power dissipation of 300mW. The DC current gain (hFE) is a minimum of 30 at Ic=5mA and Vce=5V, with a saturation voltage of 300mV maximum at Ib=500µA and Ic=10mA. The transition frequency is 200MHz, suitable for moderate-speed switching.
The device is packaged in a through-hole TO-226-3 / TO-92-3 (TO-226AA) with formed leads, offering easy mounting on PCBs for prototyping and low-volume production. It is compliant with RoHS3 and REACH (unverified), and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 26,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
TO-226-3, TO-92-3 (TO-226AA) with formed leads.
Yes, RoHS3 compliant (unverified).
Minimum 30 at Ic=5mA, Vce=5V.
100mA.
300mW.
10kΩ.