| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
73,800 pcs
|
73800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Power | |
| Resistor | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJN4301RTA is a PNP pre-biased bipolar junction transistor manufactured by ON Semiconductor. It is designed for switching and amplification applications requiring a built-in base resistor, simplifying circuit design. The device features a collector-emitter voltage (VCEO) of 50 V and a collector current (IC) of 100 mA. The DC current gain (hFE) is typically 20 at 10 mA collector current and 5 V collector-emitter voltage, with a maximum collector-emitter saturation voltage of 300 mV at 10 mA and 500 µA base current. The transition frequency is 200 MHz. The base resistor (R1) is 4.7 kΩ, integrated into the package. The transistor dissipates up to 300 mW of power. It is offered in a through-hole TO-226-3 (TO-92-3) package with formed leads, suitable for PCB mounting. The package is compatible with standard TO-92 footprints. This device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). It is also REACH unaffected. The FJN4301RTA is ideal for low-power switching and driver circuits where component count reduction is desired.
| Qty | Low | High |
|---|---|---|
| 26,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 V.
Through-hole TO-92-3 (TO-226-3).
Yes, RoHS3 compliant.
100 mA.
4.7 kΩ.
Minimum 20 at 10 mA, 5 V.
300 mW.