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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,125 pcs
|
25125 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,973 pcs
|
2973 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Collector Current (Pulse) | |
| Collector Cut Off Current (Maximum @ VCB=1400 V, RBE=0) | |
| Collector Cut Off Current (Maximum @ VCB=800 V, IE=0) | |
| Collector-Base Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ Vce = -5 V, Ic = -1 A) | |
| Emitter Cut-off Current (IEBO) | |
| Emitter-Base Breakdown Voltage | |
| Fall Time | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Standard Package Quantity | |
| Storage Temperature | |
| Storage Temperature Range | |
| Storage Time | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
FJL6920TU is an NPN triple diffused planar silicon bipolar transistor manufactured by On Semiconductor. It is designed for high voltage horizontal deflection output stages in color monitors and similar CRT display applications. The device is rated for a collector-base voltage of 1700 V, collector-emitter voltage of 800 V, and emitter-base voltage of 6 V, with maximum DC collector current of 20 A and pulse collector current of 30 A.
Key electrical characteristics include a DC current gain (hFE) of 8 minimum at VCE=5V and IC=1A, and 5.5 minimum at VCE=5V and IC=11A. Collector-emitter saturation voltage is 3 V maximum at IC=11A and IB=2.75A, and base-emitter saturation voltage is 1.5 V maximum under the same conditions. The transistor features low saturation voltage and high collector-base breakdown voltage suitable for demanding high-voltage switching circuits.
Packaged in a through-hole TO-264-3 leaded package (TO-264AA), the device dissipates up to 200 W with a junction-to-case thermal resistance of 0.625 °C/W. Maximum junction temperature is 150 °C and storage temperature range is -55 °C to 150 °C. The FJL6920TU is Pb-free, halide free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $9.22 | $9.22 |
| 25+ | $5.55 | $5.55 |
| 61+ | $4.94 | $4.94 |
| 100+ | $4.68 | $4.68 |
| 500+ | $4.14 | $4.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FJL6920TU uses a through-hole TO-264-3 (TO-264AA) package.
The maximum junction temperature is 150°C and the storage temperature range is -55°C to 150°C.
Yes, the datasheet states that the device is Pb-Free, Halide Free and RoHS Compliant.
The collector-base breakdown voltage is 1700V, collector-emitter breakdown voltage is 800V, emitter-base breakdown voltage is 6V, maximum DC collector current is 20A, and pulse collector current is 30A.
Maximum power dissipation is 200W and junction-to-case thermal resistance is 0.625 °C/W.
hFE is 8 minimum at VCE=5V and IC=1A, and 5.5 minimum with 8.5 typical at VCE=5V and IC=11A.
VCE(sat) is 3V maximum at IC=11A and IB=2.75A; base-emitter saturation voltage is 1.5V maximum under the same conditions.