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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,145 pcs
|
2145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (DC) | |
| Base-Emitter On Voltage (Vce=5V, Ic=7A) | |
| Collector-Base Breakdown Voltage (Ic=5mA, Ie=0) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum/Typical/Maximum @ Vce=5 V, Ic=7 A) | |
| Emitter-Base Breakdown Voltage (Ie=5mA, Ic=0) | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Vcb=10V, f=1MHz) | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJL4315OTU is an NPN epitaxial silicon transistor from On Semiconductor, designed for high-performance power amplification. It features a maximum collector-emitter voltage of 250V and a continuous collector current of 17A, with a power dissipation of 150W. The device offers excellent gain linearity for low total harmonic distortion, making it suitable for high-fidelity audio output amplifiers. Its wide safe operating area ensures reliable operation under demanding conditions.
The transistor is housed in a TO-264-3 through-hole package, providing robust thermal performance with a junction-to-case thermal resistance of 0.83°C/W. It operates over a junction temperature range of -50°C to 150°C. The FJL4315OTU is lead-free and RoHS compliant, meeting environmental standards. Complementary PNP transistors include the 2SA1943 and FJL4215, enabling push-pull amplifier configurations. This device is also available in alternative packages such as TO-3P (FJA4313) and TO-220 (FJP5200) for different power and space requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.47 | $6.47 |
| 25+ | $3.79 | $3.79 |
| 100+ | $3.15 | $3.15 |
| 500+ | $2.64 | $2.64 |
| 1,000+ | $2.58 | $2.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 250V.
The maximum DC collector current is 17A.
The maximum power dissipation at case temperature 25°C is 150W.
The junction and storage temperature range is -50°C to 150°C.
The device is in a TO-264-3 through-hole package (also known as TO-264AA).
Yes, the device is RoHS compliant and Pb-free as per the datasheet.
The complementary PNP transistors are the 2SA1943 and FJL4215 from On Semiconductor.