FJE5304D FJE5304D is an NPN bipolar junction transistor from On Semiconductor. It features a collector-emitter voltage of 400V, collector current of 4A, and power dissipation of 30W.
Mfr Part #:

FJE5304D

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FJE5304D is an NPN bipolar junction transistor from On Semiconductor. It features a collector-emitter voltage of 400V, collector current of 4A, and power dissipation of 30W.
Total Stock: 7,780 pcs
$ Price Range: $0.27

FJE5304D Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,780 pcs
3780 pcs On Request 1 On Request On Request 10+ On Request On Request

FJE5304D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Medical Grade
Mounting Type
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJE5304D Description

Short technical summary and product information.

The FJE5304D is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring medium voltage and current handling.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 400V, a continuous collector current (IC) rating of 4A, and a maximum power dissipation of 30W. The DC current gain (hFE) is a minimum of 8 at 2A collector current and 5V VCE. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.5V at a base current of 500mA and collector current of 2.5A.

 

The transistor is housed in a TO-225AA / TO-126-3 through-hole package, suitable for PCB mounting. The supplier device package is TO-126-3.

FJE5304D Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: FJE5304D NPN Bipolar Transistor
Subcategory: Single BJT

FJE5304D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJE5304D Estimated Pricing

Qty Low High
2,000+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJE5304D Features

  • NPN bipolar junction transistor design.
  • Rated for 400V collector-emitter voltage.
  • Supports 4A continuous collector current.
  • Maximum power dissipation of 30W.
  • Through-hole TO-126-3 package.

FJE5304D Applications

  • Used in general-purpose switching circuits.
  • Suitable for medium-power amplifier stages.
  • Ideal for power management applications.
  • Applicable in motor control drivers.

FJE5304D FAQs

4 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FJE5304D?

The collector-emitter voltage (VCEO) is 400V.

What is the maximum collector current for the FJE5304D?

The maximum collector current (IC) is 4A.

What package type is the FJE5304D available in?

The FJE5304D is available in a through-hole TO-225AA / TO-126-3 package.

Is the FJE5304D RoHS compliant?

The FJE5304D is listed as RoHS3 Compliant, though this status is unverified.

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