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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,822 pcs
|
2822 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJE3303H2TU is a high-voltage NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplifier applications requiring a maximum collector-emitter voltage of 400 V and a collector current of up to 1.5 A. With a power dissipation of 20 W, this transistor can handle moderate power levels.
Key electrical characteristics include a minimum DC current gain (hFE) of 14 at Ic=500 mA and Vce=2 V, and a maximum collector-emitter saturation voltage of 3 V at Ib=500 mA and Ic=1.5 A. The transition frequency is 4 MHz, making it suitable for low-frequency switching and linear amplification.
The transistor is housed in a TO-225AA / TO-126-3 through-hole package, which provides good thermal performance. The operating junction temperature range extends up to 150°C. It is available in RoHS3 compliant and REACH unaffected versions, though compliance status is unverified.
Typical applications include power supply circuits, motor control, and other high-voltage switching systems. The through-hole mounting allows for easy prototyping and manual assembly.
| Qty | Low | High |
|---|---|---|
| 516+ | $0.58 | $0.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
400V maximum.
TO-225AA / TO-126-3 through-hole package.
150°C.
RoHS3 compliant, but unverified.
NPN.
1.5A.
14 at 500mA, 2V.