FJE3303H1TU NPN bipolar transistor from ON Semiconductor with 400V collector-emitter voltage, 1.5A collector current, and 20W power dissipation. Through-hole TO-126-3 package.
Mfr Part #:

FJE3303H1TU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor from ON Semiconductor with 400V collector-emitter voltage, 1.5A collector current, and 20W power dissipation. Through-hole TO-126-3 package.
Total Stock: 2,669 pcs
$ Price Range: $0.23 - $0.66

FJE3303H1TU Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,706 pcs
1706 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
963 pcs
963 pcs On Request 1 On Request On Request On Request On Request On Request

FJE3303H1TU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJE3303H1TU Description

Short technical summary and product information.

The FJE3303H1TU is an NPN bipolar junction transistor manufactured by ON Semiconductor. It offers a collector-emitter voltage of 400V and a continuous collector current of 1.5A, with a power dissipation of 20W.

 

Electrical characteristics include a minimum DC current gain of 8 at 500mA collector current and 2V collector-emitter voltage, and a maximum saturation voltage of 3V at 500mA base current and 1.5A collector current. The transition frequency is 4MHz.

 

Housed in a TO-225AA / TO-126-3 package with through-hole mounting, the device supports an operating junction temperature up to 150°C. It is listed as RoHS3 compliant and REACH unaffected, though this compliance data has not been fully verified.

FJE3303H1TU Quick Information

Product Type: Bipolar (BJT) Transistor
Canonical Name: NPN Bipolar Transistor
Subcategory: Single

FJE3303H1TU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJE3303H1TU Estimated Pricing

Qty Low High
1+ $0.66 $0.66
10+ $0.58 $0.58
100+ $0.44 $0.44
500+ $0.35 $0.35
1,000+ $0.28 $0.28
2,000+ $0.25 $0.25
5,000+ $0.24 $0.24
10,000+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJE3303H1TU Features

  • 400V collector-emitter voltage rating.
  • 1.5A collector current capability.
  • 20W power dissipation rating.
  • Mounted in through-hole TO-126-3 package.
  • 4MHz transition frequency for switching.

FJE3303H1TU Applications

  • Suitable for high-voltage switching circuits.
  • Used in power supply driver stages.
  • Supports amplification in through-hole designs.

FJE3303H1TU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FJE3303H1TU?

The collector-emitter voltage (Vceo) is rated at 400V.

What package does the FJE3303H1TU come in?

The device is available in the TO-225AA / TO-126-3 package, with through-hole mounting.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

Is the FJE3303H1TU RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified in the current data.

What is the collector current rating?

The collector current (Ic) is rated at 1.5A.

What is the power dissipation capability?

The power dissipation (Pd) is 20W.

What is the minimum DC current gain of the FJE3303H1TU?

The minimum DC current gain (hFE) is 8, measured at Ic=500mA and Vce=2V.

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