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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
719 pcs
|
719 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJD5555TM is an NPN bipolar junction transistor from ON Semiconductor, designed for high-voltage switching applications. It features a minimum collector-emitter breakdown voltage of 400V and a maximum collector current of 5A, making it suitable for power management and conversion circuits.
The transistor offers a DC current gain (hFE) of at least 20 at 800mA collector current and 3V collector-emitter voltage. The maximum collector-emitter saturation voltage is 1.5V at a base current of 1A and collector current of 3.5A. Power dissipation is rated at 1.34W, and the junction can operate up to 150°C.
Packaged in a surface mount TO-252-3 (DPak, SC-63) with supplier device package TO-252AA, this component is ideal for automated assembly. The part is listed as RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.36 | $1.36 |
| 10+ | $0.86 | $0.86 |
| 100+ | $0.56 | $0.56 |
| 500+ | $0.44 | $0.44 |
| 1,000+ | $0.40 | $0.40 |
| 2,500+ | $0.34 | $0.34 |
| 5,000+ | $0.31 | $0.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
400V minimum.
TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package TO-252AA.
150°C.
RoHS3 compliant (unverified).
Minimum 20 at Ic=800mA, Vce=3V.
5A.
Maximum 1.5V at Ib=1A, Ic=3.5A.