FJD5555TM NPN bipolar junction transistor with 400V collector-emitter breakdown voltage and 5A collector current. Surface mount package TO-252AA.
Mfr Part #:

FJD5555TM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar junction transistor with 400V collector-emitter breakdown voltage and 5A collector current. Surface mount package TO-252AA.
Total Stock: 719 pcs
$ Price Range: $0.31 - $1.36

FJD5555TM Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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719 pcs
719 pcs On Request 1 On Request On Request 13+ On Request On Request

FJD5555TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJD5555TM Description

Short technical summary and product information.

The FJD5555TM is an NPN bipolar junction transistor from ON Semiconductor, designed for high-voltage switching applications. It features a minimum collector-emitter breakdown voltage of 400V and a maximum collector current of 5A, making it suitable for power management and conversion circuits.

 

The transistor offers a DC current gain (hFE) of at least 20 at 800mA collector current and 3V collector-emitter voltage. The maximum collector-emitter saturation voltage is 1.5V at a base current of 1A and collector current of 3.5A. Power dissipation is rated at 1.34W, and the junction can operate up to 150°C.

 

Packaged in a surface mount TO-252-3 (DPak, SC-63) with supplier device package TO-252AA, this component is ideal for automated assembly. The part is listed as RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).

FJD5555TM Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: FJD5555TM NPN Bipolar Transistor
Subcategory: Single NPN

FJD5555TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FJD5555TM Estimated Pricing

Qty Low High
1+ $1.36 $1.36
10+ $0.86 $0.86
100+ $0.56 $0.56
500+ $0.44 $0.44
1,000+ $0.40 $0.40
2,500+ $0.34 $0.34
5,000+ $0.31 $0.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJD5555TM Features

  • NPN bipolar junction transistor design.
  • 400V collector-emitter breakdown voltage.
  • 5A maximum collector current.
  • Surface mount TO-252AA package.
  • 1.34W power dissipation capability.

FJD5555TM Applications

  • Used in high-voltage switching circuits.
  • Suitable for power management applications.
  • Ideal for DC-DC converter designs.
  • Applicable in motor control systems.

FJD5555TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

400V minimum.

What package is this transistor available in?

TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package TO-252AA.

What is the maximum operating junction temperature?

150°C.

Is this component RoHS compliant?

RoHS3 compliant (unverified).

What is the DC current gain (hFE)?

Minimum 20 at Ic=800mA, Vce=3V.

What is the maximum collector current?

5A.

What is the Vce saturation voltage?

Maximum 1.5V at Ib=1A, Ic=3.5A.

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